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VISHAY
BY268.BY269
Vishay Semiconductors
Fast Avalanche Sinterglass Diode
\
Features
* Glass passivated junction * Hermetically sealed package
Applications
High voltage fast rectification diode
Mechanical Data
Case: Sintered glass case, SOD 57 Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 370 mg, (max. 500 mg)
949539
Parts Table
Part BY268 BY269 Type differentiation VR = 1400 V; IFAV = 0.8 A VR = 1600 V; IFAV = 0.8 A SOD57 SOD57 Package
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Parameter Peak reverse voltage, non repetitive Reverse voltage Peak forward surge current Average forward current Junction and storage temperature range Non repetitive reverse avalanche energy I(BR)R = 0.4 A see electrical characteristics see electrical characteristics tp = 10 ms, half sinewave Test condition Sub type BY268 BY269 BY268 BY269 Symbol VRSM VRSM VR VR IFSM IFAV Value 1600 1800 1400 1600 20 0.8 Unit V V V V A A C mJ
Tj = Tstg - 55 to + 175 ER 10
Maximum Thermal Resistance
Tamb = 25 C, unless otherwise specified Parameter Junction ambient Test condition on PC board with spacing 25 mm L = 10 mm, TL = constant Sub type Symbol RthJA RthJA Value 100 45 Unit K/W K/W
Document Number 86005 Rev. 5, 07-Jan-03
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BY268.BY269
Vishay Semiconductors Electrical Characteristics
Tamb = 25 C, unless otherwise specified Parameter Forward voltage Reverse current IF = 0.4 A VR = 1400 V VR = 1600 V VR = 1400 V, Tj = 100 C VR = 1600 V, Tj = 100 C Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A BY268 BY269 BY268 BY269 Test condition Sub type Symbol VF IR IR IR IR trr 1 1 Min Typ.
VISHAY
Max 1.25 2 2 15 15 400
Unit V A A A A ns
Typical Characteristics (Tamb = 25 C unless otherwise specified)
R thJA - Therm. Resist. Junction / Ambient ( K/W )
120
0.9
100 80 60 l 40 20 0 0 5 10 15 TL=constant 20 25 30 l - Lead Length ( mm ) l
I FAV - Average Forward Current ( A )
0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 20 40 60 VR=VRRM half sinewave RthJA=100K/W PCB: d=25mm
RthJA=45K/W l=10mm
80 100 120 140 160 180
94 9090
16413
Tamb - Ambient Temperature ( C )
Figure 1. Typ. Thermal Resistance vs. Lead Length
Figure 3. Max. Average Forward Current vs. Ambient Temperature
10.000
1000 VR = VRRM
I F - Forward Current ( A)
1.000
Tj=175C Tj=25C
IR - Reverse Current ( mA )
100
0.100
10
0.010
0.001 0.0
16412
1 0.5 1.0 1.5 2.0 VF - Forward Voltage ( V ) 2.5
16414
25
50 75 100 125 150 Tj - Junction Temperature ( C )
175
Figure 2. Forward Current vs. Forward Voltage
Figure 4. Reverse Current vs. Junction Temperature
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Document Number 86005 Rev. 5, 07-Jan-03
VISHAY
BY268.BY269
Vishay Semiconductors
900
PR - Reverse Power Dissipation ( mW ) CD - Diode Capacitance ( pF )
35 VR = VRRM 30 25 20 15 10 5 0 25 50 75 100 125 150 Tj - Junction Temperature ( C ) 175
16416
800 700 600 500 400 300 200 100 0 PR-Limit @80%VR
f=1MHz
PR-Limit @100%VR
0.1
16415
1.0 10.0 VR - Reverse Voltage ( V )
100.0
Figure 5. Max. Reverse Power Dissipation vs. Junction Temperature
Figure 6. Diode Capacitance vs. Reverse Voltage
Package Dimensions in mm
3.6 max. Sintered Glass Case SOD 57 Weight max. 0.5g Cathode Identification
technical drawings according to DIN specifications 94 9538
0.82 max.
26 min.
4.2 max.
26 min.
Document Number 86005 Rev. 5, 07-Jan-03
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BY268.BY269
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 86005 Rev. 5, 07-Jan-03

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